{ } maximum ratings: (t c =25c) symbol units collector-base voltage v cbo 100 v collector-emitter voltage v ceo 80 v emitter-base voltage v ebo 6.0 v continuous collector current i c 2.0 a peak collector current (t p < 0.3ms) i cm 5.0 a continuous base current i b 1.0 a power dissipation (t a =25c) p d 1.0 w operating and storage junction temperature t j , t stg -65 to +200 c thermal resistance ja 175 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i ces v ce =90v 10 a i ces v ce =50v (t c =150c) 500 a i ceo v ce =40v 50 a i ebo v eb =4.0v 1.0 a i ebo v eb =6.0v 100 a bv ceo i c =30ma 80 v v ce(sat) i c =1.0a, i b =100ma 0.45 v v ce(sat) i c =2.0a, i b =400ma 1.0 v v be(on) v ce =4.0v, i c =2.0a 1.5 v h fe v ce =4.0v, i c =1.0a 30 120 h fe v ce =4.0v, i c =2.0a 10 h fe v ce =10v, i c =1.0a, f=1khz 30 f t v ce =10v, i c =1.0a 30 mhz t on i c =1.0a, i b1 =i b2 =100ma 150 ns t off v be(off) =3.7v, r l =20 450 ns 2N5333 pnp silicon power transistor to-39 case central semiconductor corp. tm r0 (25-september 2008) description: the central semiconductor 2N5333 is a pnp silicon power transistor manufactured by the epitaxial planar process, mounted in a hermetically sealed metal case, designed for amplifier and switching applications. marking: full part number
central semiconductor corp. tm to-39 case - mechanical outline 2N5333 npn silicon power transistor r0 (25-september 2008) lead code: 1) emitter 2) base 3) collector (case) marking: full part number
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